Sic substrate
Sic substrate： At present, our silicon carbide is mainly used for the combination of efficient and high-temperature operation, such as the high power density required by power conversion electronic devices of electric vehicles. We also provide Sic wafer of 200mm Sic wafer, 150mm Sic wafer and 300mm Sic wafer.
Sic substrate
Free Standing gan Wafer | Single Crystal Substrates
Si Doped Undoped Laser Device Gallium Nitride Wafer
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
8 Inch 12 Inch 6Inch gan Wafer
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
4inch 6inch GaN-ON-SiC EPI layer
sic substrate：
The unique electronic and thermal properties of silicon carbide | sic substrate make it very suitable for some semiconductor devices, especially those with high power and high frequency.
The operating capacity of these devices is far greater than that of silicon and potassium arsenide. Based on the main advantages of silicon carbide technology, including reducing switching loss, higher power density, better heat dissipation and increasing bandwidth capacity, These have led to highly compact solutions.
In order to reduce costs while greatly improving energy efficiency, silicon carbide technology is currently used.
I’m still improving, including switching power supply, solar cell and wind power inverter, as well as industrial motor drive and some automotive applications.
Of course, the development of smart grid power switch is very large, and the use of applications is also very large. Therefore, choosing our silicon carbide wafer for your project has dual advantages in terms of performance and price.
We develop and manufacture high-quality silicon carbide chips | sic substrate . We have many years of experience in producing silicon carbide wafers and exporting in large quantities.
The main reason is that our quality can be recognized by customers in testing and testing, and our price is far superior to similar enterprises. This is why our customers will choose us.
Our continuous improvement of production technology and advanced technology has promoted us through unremitting efforts.
As for the quality of silicon carbide wafers, including the cost control of raw materials, we have also made a lot of efforts.
We keep increasing the diameter of the sic substrate, and reduce costs by increasing the output, so that our users can enjoy the benefits brought by our technological improvement, thus truly achieving market success.