p doped silicon
P-doped silicon is a semiconductor material in which more holes are formed by introducing a trivalent element such as boron into the silicon lattice; these holes act as positive charge carriers, making the material easily conductive.
In integrated circuits, P-type silicon combines with N-type silicon to form PN junctions, which are the basis of electronic devices. Increasing doping concentration decreases its resistivity and is suitable for building P-type semiconductor devices.
p doped silicon
P-doped silicon is a silicon material doped with trivalent elements such as Boron B, Aluminum Al, or Gallium Ga to increase the concentration of holes as main carriers, and these impurity atoms form a positive charge carrier in the silicon lattice.
This reduces its resistivity. As the doping concentration increases, the concentration of holes in P-type silicon is elevated accordingly, which leads to a further decrease in resistivity as more carriers can participate in the conductivity.
When the doping concentration is low, the resistivity of P-type silicon decreases with increasing doping concentration. At very high doping concentrations, the resistivity may rise due to enhanced impurity scattering effects. Medium doping concentration: the decreasing trend of resistivity becomes flat.
As for the breakdown effect, semiconductor materials undergo breakdown at high electric fields, which is related to the doping of the material.
In P-type silicon, avalanche breakdown or tunneling breakdown also occurs when the applied electric field strength exceeds a certain threshold, resulting in a sharp decrease in resistance, but this is not a characteristic directly caused by doping, but rather a combined effect of the electric field strength and the material structure.
As a result, the breakdown voltage of P-type silicon is usually lower than that of N-type silicon, due to the lower mobility of holes than electrons, resulting in charge carriers in P-type silicon reaching the breakdown condition more easily under the action of an electric field.
