300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED : The most obvious feature of our cartoonists is that they have good crystal quality. In terms of production technology, we have breakthrough technical advantages, mainly in producing high quality 2 inch dia with bulk C plane Gan wafer.and non polar M plane. A plane and semi polar Gan substrates.
These products are mainly used in optoelectronic devices, such as green and blue lasers, LED produced by LED, and high electron mobility transistors.
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
POWER RF Micro-LED application 8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS
8inch GAN-ON-SI EPI-WAFERS For Power Application, 100mm, 150mm, 200mm
Specs for Blue GaN-on-Si Power application Epi-wafers
Broad band gap
The energy field created by the band structure in a crystal without electrons is referred to as the band gap (semiconductor materials with a band gap larger than silicon are often referred to as wide band gap semiconductors). Wide-bandgap material with high electrical breakdown voltage and good optical transparency
Product Specification
Items Values/Scope
Substrate Si
Wafer diameter 100mm,150mm,200mm,300mm
Epi-layer thickness 2-7 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN, 150mm)
Electron mobility >1800 cm2 /Vs (20nm Al0.25GaN, 150mm)
Product \sDiversity
GaN-on-Si (300mm and up), GaN-on-SiC (150mm and up), GaN-on-HR Si (200mm and up), and GaN-on-Sapphire (up to 150mm)
GaN on GaN
• A certificate from ISO9001:2015 for the design and production of GaN epi material
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
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