Gan Epitaxial Wafer
Gan Epitaxial Wafer ： In the upcoming years, the market for sapphire substrates is anticipated to grow due to the rising demand for LEDs. LEDs are frequently utilized in lighting and display systems. Consequently, it is anticipated that during the coming few years, the market for sapphire substrate would expand steadily. The increase in demand, however, can be related to technological developments in LED production.
GaN and II-VI thin films are excellent candidates for epitaxial deposition on the sapphire substrate. It can fit the lattices of GaN thanks to its low lattice mismatch coefficient and outstanding mechanical characteristics. Additionally, the sapphire substrate is extremely sturdy and temperature-resistant.
Gan Epitaxial Wafer
Free Standing gan Wafer | Single Crystal Substrates
Si Doped Undoped Laser Device Gallium Nitride Wafer
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
8 Inch 12 Inch 6Inch gan Wafer
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
4inch 6inch GaN-ON-SiC EPI layer
Gan Epitaxial Wafer
Gan Epitaxial Wafer： GaN device design and production include subcategories such as RF and power electronics. Power electronic device products include SBD, normally-off FET., Normally-on FET, Cascode FET, and other products for wireless charging, power switch, envelope tracking, inverter, converter, and other markets; and radio frequency device products include PA, LNA, switches, MMICs, etc., targeted at base station satellite, radar, and other markets.
GaN-on-GaN: The blue/green laser market represents the largest potential application market for GaN with homogeneous substrates.
Because Si is the most mature, defect-free, and low-cost substrate material; because Si can be expanded to 8-inch wafer fabs, reducing the unit production cost, so that the wafer cost is only one percent of that of the SiC base; because the growth rate of Si is 200 to 300 times that of the SiC crystal material, and the corresponding fab equipment depreciation an order of magnitude smaller; because the current industry production yield is low, but there is a huge potential for cost reduction The primary application for GaN-on-Si epitaxial wafers is in the production of power electronic devices, and the current technical trend is toward optimizing large-scale epitaxy technology.
GaN on sapphire is mostly employed in the light-emitting diode (LED) industry, with a 4″ size being the most common.
GaN on SiC is a good RF material because it combines the low loss and high power density of GaN with the superior thermal conductivity of SiC. The SiC substrate prevents expansion beyond the existing 4in and 6in sizes, and an 8in version has not been pushed. Epitaxial wafers grown on GaN-on-SiC are typically employed in the production of microwave radio frequency components.
Both the HEMT and HBT radio frequency processes and the PowerFET power electronic device process fall into two distinct groups.
Applications
There are white LEDs, violet LEDs, UV LEDs, and blue LEDs.
– Checking the environment
Substrates for epitaxial growth with MOCVD, etc. – Laser diodes: violet LD and green LD for very small projectors.
– Devices that run on electricity
– Electronic devices with a high frequency
Display with Laser Projection, Power Device, and so on.
Date storage
lights that use less energy
High-performance Electronic devices
New energy solor hydrogen technology
Terahertz band light source
Gan Epitaxial Wafer
Gan Epitaxial Wafer
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