silicon carbide company
In addition, we offer 4-, 6-, and 8-inch silicon carbide (SiC) epitaxial wafers and epitaxial foundry services focused on producing high-performance power devices.
These SiC epitaxial wafers are suitable for manufacturing a wide range of power devices including SBD, JBS, PiN, MOSFET, JFET, BJT, GTO, IGBT, etc., with a voltage range covering 600V to 3300V, which meets the needs of various application scenarios from low voltage to high voltage.
The 4-inch and 6-inch SiC epitaxial wafers we offer not only have excellent electrical performance and stability, but also high reliability and durability. These wafers exhibit excellent performance in the fabrication of power devices, and are capable of meeting our customers’ pursuit of high performance, high efficiency, and high reliability.
Our customized silicon substrate solutions and SiC epitaxial wafers and foundry services are dedicated to providing customers with high-precision, high-performance microelectronic cornerstones.
We will continue to contribute to the development of the microelectronics industry by adhering to our philosophy of professionalism, efficiency and innovation.
silicon carbide company
In today’s rapid development of 5G communication technology, material selection is crucial for realizing high-performance and high-reliability microwave power devices.
Compared to traditional silicon-based LDMOS devices, silicon-carbide-based gallium nitride RF devices are better suited to the low energy consumption and high efficiency requirements of 5G communication base stations, radar applications, and other fields.
With its excellent performance, the 4-inch high-purity semi-insulating silicon carbide double-sided polished plate has become an ideal substrate for making microwave power devices, which show significant advantages in improving RF range, realizing ultra-long-distance identification, anti-jamming, and high-speed, large-capacity information transmission.
