silicon on sapphire
Sapphire-based silicon epitaxial structures, an innovative semiconductor material construction, skillfully cultivate a layer of high-purity single-crystal silicon film on a sapphire substrate.
This design exquisitely blends the superior electronic conduction properties of silicon with the extraordinary physical stability of sapphire, opening up unprecedentedly advantageous paths for the development of modern integrated circuit (IC) technology and optoelectronic components.
Not only does it significantly enhance the performance stability of devices, but through its unique combination of materials, it also opens up unprecedented opportunities for innovation and application potential in the electronics field.
silicon on sapphire
The structure and advantages of Silicon on Sapphire (SOS) are: complete isolation, radiation resistance, and high thermal conductivity.
The silicon layer is N-type and is converted to P-type by ion implantation to meet circuit design requirements. The hardness of sapphire makes the wafer fabrication process more difficult after cutting or disassembly.
The chemical stability of sapphire ensures device reliability in harsh environments.
