What is sic wafer?

SiC Wafers, or Silicon Carbide Wafers, are semiconductor materials formed through processes such as cutting, grinding, polishing, and cleaning of silicon carbide (SiC) crystals. SiC wafers are considered to be one of the important materials for the future semiconductor industry, offering stable physical and chemical properties. They exhibit exceptional performance in high-temperature, high-voltage, and high-power applications, such as in electric vehicles, power electronics, aerospace, and defense.

1. Physical and Chemical Properties:

• SiC wafers have atoms internally bonded by covalent bonds, which provide them with great stability. In ideal conditions, they reach an electron-saturated state, forming a stable chemical structure. The Si and C atoms in SiC crystals share electrons to form strong covalent bonds, ensuring the crystal’s structural stability.
• The manufacturing process of SiC wafers includes steps such as growth, cutting, grinding, polishing, and packaging.
• They have a high hardness, with a Mohs hardness of 9.2-9.3, a bandgap width of about 2.8 to 3.2 electron volts, second only to diamond.
• SiC wafers have high thermal conductivity, reaching 3-5 W/cm·K, which is three times that of traditional semiconductor Si and eight times that of GaAs.
• Their chemical properties are stable, and they do not react with any acids under high-temperature conditions. Over time, when exposed to air, they slowly form a dense layer of SiO2, which prevents further oxidation. This chemical stability allows SiC to maintain its performance in harsh environments.

What is sic wafer?

1. Main Applications:

• Power Electronic Devices: SiC wafers are widely used in high-efficiency, high-power pulse devices, power converters, and power transmission and distribution systems.
• Optoelectronic Devices: In the optoelectronic field, SiC wafers have good transparency to visible and ultraviolet light and a low light absorption rate, making them suitable for high-power lasers, photoelectric sensors, and fiber optic communication systems. They can be used to create photoelectric elements such as solar cells and photodiodes.
• RF and Microwave Devices: The high electron mobility and low characteristic impedance of SiC wafers make them suitable for high-power microwave amplifiers.
• Power Electronic Modules: SiC wafers are used to manufacture photoelectric elements such as solar cells and photodiodes, improving energy conversion efficiency and system performance.
• Sensors: SiC wafers can also be used to create sensors like temperature sensors, chemical gas sensors, and biosensors. As a fundamental structure for sensors, SiC wafers provide a stable physical platform. Their excellent mechanical strength and chemical stability allow them to withstand extreme environmental conditions.

In summary, due to their outstanding physical and chemical properties, SiC wafers play a vital role in various industries.

What is sic wafer?

The SiC substrate stands out due to its exceptional surface smoothness, with a roughness of Ra<0.5nm, and high precision. This makes it an ideal choice for a range of industries, including electronics, aerospace, and automotive.

Its tensile strength exceeds 400MPa, ensuring durability and resistance to high stress levels. With a density of 3.21 G/cm³, the SiC substrate is perfect for applications that demand a lightweight material.

It can be customized into various shapes and sizes, such as 10x10mm and 5x5mm, and can also be manufactured into specialized SiC plates, making it versatile for numerous uses.

Overall, the SiC substrate is a premium product that offers outstanding thermal conductivity, surface hardness, and tensile strength. Its lightweight nature and customizability make it suitable for a wide array of applications across different industries.

Features:

•  Product Name: SiC Substrate

•   Surface: Si-face CMP; C-face MP

•   Surface Roughness: Ra<0.5nm

• Density: 3.21 G/cm³

•   Surface Hardness: HV0.3>2500

•     Dielectric Constant: 9.7 Applications: The SiC substrate material boasts a thermal expansion coefficient of 4.5 x 10⁻⁶/K, making it a high-performance choice.

Its surface flatness is λ/[email protected], and it has a surface hardness of HV0.3>2500.

Made from SiC monocrystal, it is known for its superior durability and strength.

These silicon carbide wafers are perfect for various applications, including electronic devices, LED lighting, and power electronics.

They can also be utilized in SiC laser cutting, serving as a precision cutting tool. The substrate’s ability to be customized to specific shapes and sizes adds to its versatility across industries.

For those requiring customized SiC plates, the SIC010 model is an excellent solution. Its high-quality material and precise cutting capabilities ensure it can meet specific needs, whether for small or large quantities, at competitive prices.