Doped silicon

Doped silicon, in general, is a semiconductor material that has been purposefully injected with one or more impurities in order to change the intrinsic semiconductor’s properties. Understanding the distinction between extrinsic and intrinsic semiconductors is crucial for understanding this process. Materials introduced purposefully into an intrinsic semiconductor with the goal of altering its properties are known as extrinsic semiconductors.

Diagram of formation energy
Hydrogen was added to the subsurface portions of semiconductor sample during processing and etching. The dip in profiles towards the surface is caused by these hydrogen molecules. Therefore, to understand the level of electron energies and the relative positions of the conduction and valence bands, an energy band diagram for doping silicon is required.

Alternative mechanisms ：Doping silicon

The bound and free electrons in the silicon layer control the phonon scattering rate. Varied silicon film states will lead to different phonon scattering rates. The scattering rates will also be impacted by the interatomic distance. Thermal conductivity will additionally vary due to differing phonon scattering rates.

The doping concentration affects the silicon layer’s thermal conductivity. A low concentration doping silicon layer is in the insulating state, whereas a high concentration doped silicon layer has metallic thermal conductivity. As the silicon film’s thickness decreases, the differences between the works become more pronounced.

Doped silicon ： The bound and free electrons, as well as the interatomic distance, affect the phonon scattering rate in transition materials. This is significant because free electron effects must be taken into account in thermal conductivity calculations. The model also takes into account how long the liberated electrons take to relax.