silicon wafer manufacturing
Silicon Wafer Manufacturing Process Overview
The process of manufacturing silicon wafers is based on previously produced silicon ingots and involves a number of key steps to ensure the high quality and performance of the final product.
I. Ingot Dicing
The first manufacturing step of a silicon wafer is the cutting of the silicon ingot. In this stage, high-precision diamond blades are utilized to precisely cut the ingot to obtain a wafer of a specific thickness that meets the design requirements. This step requires strict control of the cutting parameters to ensure the dimensional accuracy and surface quality of the wafer.
Wafer Polishing
Next, the wafer surface is polished to remove particles, scratches and other impurities that may have been generated during the cutting process. The polishing process uses advanced mirror polishing technology to polish the wafer surface to a very high degree of finish, ensuring that the circuit pattern can be clearly engraved on the wafer surface and maintain excellent electrical performance.
silicon wafer manufacturing
Breakthroughs in silicon single crystal technology
An important milestone in the manufacture of silicon wafers is the establishment of technology that enables the mass production of high-purity, defect-free silicon single crystals at relatively low cost. This technology allows the manufacture of silicon materials with 99.99% or higher ultra-high purity, providing a solid foundation for the manufacture of high-performance semiconductor devices.
Fourth, the evolution of silicon ingot manufacturing technology
Silicon ingot manufacturing technology is also constantly developing and improving. So far, the diameter of the silicon ingot has grown from the initial 20 mm to 200 mm, greatly improving the capacity and production efficiency of silicon wafers.
At the same time, similar technological advances have been adopted for the manufacture of SiC (Silicon Carbide) ingots. 2-inch SiC ingots refer to cylindrical or massive single crystals of Silicon Carbide with a diameter or side length of 2 inches, which have a wide range of applications as a starting material for the production of a wide variety of semiconductor devices, such as power electronics and optoelectronic devices.
