silicon wafer manufacturer in China
silicon wafer manufacturer in China. In the field of high-tech materials, the density and quality of silicon wafers, as the core material of the semiconductor industry, directly determine the performance of the final product.
Our company, as a leading manufacturer in the industry, understands the importance of wafer density to the performance of our customers’ products.
2 Inch A - Axis Sapphire Wafer For EPI
5 Inch Sapphire Wafer R Plane Dia 125mm
8 Inch Sapphire Wafer Dia 200 mm
200mm sic wafers | SiC Substrate (150mm, 200mm)
12 Inch Sapphire Wafers Dia 300mm
4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
6 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
silicon wafer manufacturer
Silicon Wafer Density Overview The density of silicon wafers, the cornerstone of the modern electronics industry, is an important indicator of material performance.
A standard silicon wafer has a density of approximately 2.33 g/cm3, a value that reflects the microstructural compactness of the silicon material, which in turn determines the performance of the wafer in terms of electronic transmission, heat transfer, and other aspects.
Professional Manufacturing Strength Our company’s superb manufacturing process and strict quality control ensure that the silicon wafers we provide are of stable density and excellent quality.
Our product line covers a wide range of high-tech materials such as high-temperature superconducting thin-film substrates, magnetic and ferroelectric thin-film substrates, semiconductor crystals, optical crystals, laser crystal materials, etc., which are capable of meeting the needs of customers in different fields.
In the manufacturing process, we pay attention to every detail, from material selection, crystal growth, cutting, grinding to polishing, every process is strictly controlled to ensure the stability and reliability of product quality.
Our quality control department is responsible for monitoring the entire process to ensure that all materials and tolerances meet or exceed customer specifications.
Service Advantage
We understand that quality products cannot be separated from professional services.
With over 10 years of experience in the semiconductor industry, our sales engineers not only have a deep technical background, but also possess keen market insights.
They are able to provide professional technical advice and timely quotes according to customers’ needs, ensuring that customers can obtain satisfactory products in the shortest possible time.
When customers encounter problems, we always stand in the customer’s point of view and actively look for solutions. We promise to solve customers’ problems within 10 hours to ensure that their production is not affected.
This quick response and problem solving ability is the embodiment of our service advantage.
Grade | Zero MPD | |||
Diameter | 150.0mm±0.25mm | |||
Thickness | 4H-N | 350um±25um | ||
4H-SI | 500um±25um | |||
Wafer Orientation | On axis :<0001>±0.5°for 4H-SI | |||
Off axis : 4.0°toward<1120>±0.5°for 4H-N | ||||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 47.5mm±2.5mm | |||
Edge exclusion | 3mm | |||
TTV/Bow/Warp | ≤15um/≤40um/≤60um | |||
Micropipe Density | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Resistivity 4H-N 4H-SI | 0.015~0.028Ω!cm | |||
≥1E5Ω!cm | ||||
Roughness | Polish Ra ≤1nm CMP Ra≤0.5nm | |||
#Cracks by high intensity light | None | 1 allowed ,≤2mm | Cumulative length ≤10mm,single length≤2mm | |
*Hex plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤ 2% | Cumulative area ≤ 5% | |
*Polytype areas by high intensity light | None | Cumulative area ≤ 2% | Cumulative area ≤ 5% | |
*&Scratches by high intensity light | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 5scratches to 1 x wafer diameter cumulative length | |
Edge chip | None | 3 allowed ,≤0.5mm each | 5 allowed ,≤1mm each | |
Contamination by high intensity light | None |
Definition of silicon wafer density: The density of monocrystalline silicon is usually between 2.32 and 2.34 g/cm³. The primary unit of silicon wafer density is: “grams per cubic centimeter” (g/cm³) .
Indicates the mass of a silicon wafer per unit volume . Factors affecting the density of silicon wafers, including the purity of the base material, crystal structure, impurities and defects, the structure of silicon crystals, and so on.
Preparation methods and conditions: The method of preparation of silicon wafers (e.g., direct drawing, zone melting, etc.) and the conditions of temperature and pressure during the preparation process also have an effect on the density of silicon wafers.
In the sense that the density of a silicon wafer reflects its physical properties, mechanical properties and optical properties. The stability of the density will directly affect the consistency and reliability of the wafer’s performance.