6 inch silicon wafer | Dia150mm 4H N Type dummy grade
We mainly provide 6 inch silicon wafer, also include: 12 inch silicon wafer, 2 inch, 3 inch, 4 inch and 8 inch sic wafer.
Silicon carbide (SiC), a IV-IV binary compound, is unique among the IV elements of the periodic table and is noted for its solid compound form and excellent semiconductor properties.
Its unique thermal, mechanical, chemical, and electrical properties make it occupy a place in the field of manufacturing high-temperature, high-frequency, and high-power electronic components, and what’s more, it is also the preferred choice of GaN blue light-emitting diode substrate material.
At present, 4H-type silicon carbide as the dominant substrate materials, based on the difference in the conductive type, can be subdivided into semi-insulating type (including non-doped and doped) and N-type.
Materials: SIC Crystal | Thickness:Customized |
Type: 4h-n | MPD:《2cm-2 |
Purity:99.9995% | Application: |
Resistivity:0.015~0.028ohm.cm | TTV:《15um |
Size: 8inch 2inch, 3inch ,4inch ,6inch ,8inch | Bow:《25um |
Warp:《45um | Model Number： 4H-N |
6 inch silicon wafer |
6 inch silicon wafer
When it comes to our 6-inch silicon carbide MOSFET wafers, their outstanding characteristics cannot be overlooked:
Outstanding voltage withstand: Thanks to the high breakdown field of silicon carbide, this wafer exhibits exceptional voltage withstand capability, making it ideal for high-voltage applications.
Outstanding Current Carrying Capability: Due to the high electron mobility of the silicon carbide material, the 6-inch silicon carbide MOSFET wafers can easily meet the challenges of high currents.
High-frequency response: The low carrier mobility of silicon carbide gives the wafers superior high-frequency response characteristics, making them ideal for high-frequency applications.
Excellent Thermal Stability: The high thermal conductivity of the silicon carbide material ensures that the wafers maintain excellent performance in high-temperature environments.
It is these excellent characteristics, so that the 6-inch silicon carbide MOSFET wafers in the field of power electronics shine, whether it is transformers, rectifiers, inverters or power amplifiers, can be seen in its figure.
Especially in high-tech areas such as solar inverters, charging equipment for new energy vehicles, rail transit systems, high-speed air compressors in fuel cells, DC-DC converters (DCDC), electric vehicle motor drives, and data centers, this wafer is helping to digitally revolutionize the industry.
6 inch silicon wafers
Dummy-grade semiconductor wafers, utilizing high-purity silicon carbide (4H-SiC) substrate material, along with LED semiconductor wafers.
We have the technical expertise to provide you with 4-inch and 6-inch SiC epitaxial wafers that are ideal for fabricating 600V to 3300V power devices.
Whether you are looking for Schottky Barrier Diodes (SBD), Junction Barrier Schottky Diodes (JBS), PiN Diodes, Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Junction Field Effect Transistors (JFETs), Bipolar Transistors (BJTs), Gate Turn-Off Thyristors (GTOs), or Insulated Gate Bipolar Transistors (IGBTs), we have the SiC epitaxial wafer to meet your manufacturing needs. wafers to meet your manufacturing needs.
We understand the stringent material performance requirements of power devices, which is why our wafers are widely recognized in the industry for their excellent electrical performance and stability. Choosing us is choosing the double guarantee of professionalism and quality.
If you have any customization or consulting needs, please feel free to contact us, we will be happy to serve you and create a better future together.
Production | Research | Dummy | |
Type | 4H | 4H | 4H |
Resistivity(ohm·cm) | ≥1E9 | 100% area＞1E5 | 70% area＞1E5 |
Diameter | 150± 0.2mm | 150± 0.2mm | 150± 0.2mm |
Thickness | 500±25μm | 500±25μm | 500±25μm |
Axis | <0001> | <0001> | <0001> |
TTV | ≤5μm | ≤10μm | ≤20μm |
LTV(5mm*5mm) | ≤3μm | ≤5μm | ≤10μm |
Bow | -25μm~25μm | -35μm~35μm | -45μm~45μm |
Warp | ≤35μm | ≤45μm | ≤55μm |
Ra(5um*5um) | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
Micropipe Density | ≤1ea/cm2 | ≤10ea/cm2 | ≤15ea/cm2 |
6 inch silicon wafer
We are proud to offer 4H-N type 6-inch SiC substrates, as well as multiple grades of stock wafers. We are also happy to arrange customized services to meet your specific needs. If you are interested in our products or have any questions, please feel free to contact us and we will be happy to assist you!