substrate silicon
First, silicon as a substrate material preferred basis in the grand blueprint of semiconductor technology, the substrate silicon wafer as the cornerstone, the choice is critical. Silicon is the preferred material because of its unique semiconductor properties, high purity and uniformity standards, mature manufacturing process system, a wide range of applications and significant cost-effectiveness. Precise control of semiconductor properties: Silicon has a moderate conductivity, and through precise control of doping elements (e.g., phosphorus, boron), the type of conductivity (p-type or n-type) can be flexibly adjusted to lay the foundation for building complex electronic structures. Stringent requirements for high purity and homogeneity: In order to ensure that device performance is not interfered by impurities, silicon wafers need to meet extremely high purity standards (≥99.9999%), while maintaining a high degree of physical and chemical consistency, which is particularly critical for the manufacture of large-scale integrated circuits.
substrate silicon
Mature and Stable Manufacturing Process:
The maturity of silicon single crystal growth technology, combined with perfect post-treatment processes (oxidation, diffusion, ion implantation, etc.), provides a solid guarantee for the stable production of high-quality silicon wafers.
Wide and deep application fields: silicon substrate is widely used in various electronic devices from microprocessors, memories to sensors, and its influence spans consumer electronics, communications, industrial control and even aerospace and other industries, and has become the core pillar of modern electronic technology.
Second, the preparation process of silicon substrate silicon substrate preparation involves a number of precision steps, including single crystal growth, cutting and polishing, etc.,each step is critical. Single crystal growth:
the use of zone melting method or straight pulling method and other technologies, from the high-purity silicon melt to grow a high-quality single crystal silicon rods, which is the basis for subsequent processing.
Cutting and Polishing: Single crystal silicon rods are precisely cut into thin wafers, which are subsequently polished by multiple rounds of precision polishing to ensure that the surface of the wafers meets extremely high standards of flatness and cleanliness.
Third, the relationship between the substrate and the epitaxial layer The substrate as the starting platform for building the device, and its quality directly affects the growth quality of the subsequent epitaxial layer.
Epitaxial growth technology can deposit a single crystal layer with specific electrical or physical properties on the substrate, providing flexibility and diversity for the design of the active region of the device.
Fourth, the choice of substrate materials and strategic significance of the choice of appropriate substrate materials, is the key to balancing device performance, reliability and economic cost.
In specific application scenarios (e.g., high-power, high-frequency devices), new materials such as Silicon Carbide (SiC) or Gallium Nitride (GaN) have attracted much attention because of their superior performance.
