Silicon nitride ：The chemical compound silicon nitride is made up of the elements silicon and nitrogen. Si 3N 4 is the most thermodynamically stable and commercially important of the silicon nitrides, and it is frequently referred to as “silicon nitride.” It is a white, high-melting-point solid that is rather chemically inert, with dilute HF and heated H 3PO attacking it. It is quite difficult (8.5 on the mohs scale). It has a high thermal stability and strong optical nonlinearities, making it suitable for all-optical applications.
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Silicon nitride ：
Three steps are typically involved in the processing of silicon pocket wafers: siliconizing, patterning, and firing. This process is carried out in a reaction chamber. The procedure can be carried out again for additional circuit layers. These phases may last six to twelve weeks.
High temperature, high pressure, and chemical vapor deposition are typically used in producing silicon pocket wafers (CVD). At 500–900 C, CVD gases react most effectively. In a reaction chamber, an Argon atmosphere is used to heat the wafer. Over the surface, silicon dioxide is deposited. The field oxide is the name of this layer.
The entire wafer is covered with a thin coating of conductive metal. The doping barrier is the name of this layer. The oxidation of the wafer’s surface produces the doping barrier.
The most common material used to create silicon wafers is siliconized silicon carbide, which has a low impurity content and great thermal shock tolerance. During firing procedures, siliconized silicon carbide does not release gases.
The size distribution of the pores on silicon pocket wafers is typically bimodal, with the fine pores being smaller than the coarse pores. The porosity typically ranges from 35 to 40 v/o. Each wafer is covered with silicon dioxide and a thin coating of conductive metal.
Using a centering locator is one method for manufacturing silicon pocket wafers. When inserted into a pocket, centering locators lessen the process’ heat impact and increase process repeatability. Centering locators are typically distributed uniformly throughout the pocket’s edge.
A centering locator’s ability to reduce the possibility that process gases may leak onto the rear of the wafer is its most crucial feature. In order to prevent contact with the substrate holder’s annular shoulder, the centering locator should also be placed inside the pocket.
Silicon pocket wafers can be imaged using a variety of methods.