silicon carbide conductive semi-insulating substrate application areas

1. High-power semiconductor devices (conductive): silicon carbide substrate has a high breakdown field strength and thermal conductivity, making it an ideal material for making high-power power transistors and diodes and other devices. These devices play an important role in new energy vehicles, photovoltaic, smart grid and other fields.

2. RF electronics (semi-insulated): The high switching speed and power tolerance of silicon carbide substrates make them the preferred material for applications such as RF power amplifiers, microwave devices and high-frequency switches. In the field of wireless communications, silicon carbide semi-insulating substrate is the basis for the manufacture of gallium nitride microwave RF devices, which is important for improving the quality and efficiency of communications.

3. Optoelectronic devices (semi-insulating): silicon carbide substrate has a wide energy gap and high thermal stability, suitable for the production of photodiodes, solar cells and laser diodes and other devices. These devices have a wide range of applications in the field of photovoltaic conversion, energy utilization and other fields.

4. Temperature sensors (conductive): the high thermal conductivity and thermal stability of silicon carbide substrate makes it an ideal material for making high-temperature sensors and temperature measurement instruments.

In aerospace, petrochemical and other high-temperature environments, silicon carbide temperature sensors have an irreplaceable role.