silicon carbide chips

silicon carbide chips

 Epitaxial technology refers to the growth of a layer of high-quality single-crystal material on the surface of a silicon carbide (SiC) substrate.

This technique can be categorized into heterogeneous epitaxy and homogeneous epitaxy depending on the substrate and the material of the growth layer.

The growth of a gallium nitride (GaN) epitaxial layer on a semi-insulating SiC substrate is known as heterogeneous epitaxy, while the growth of a SiC epitaxial layer on the surface of a conductive SiC substrate is known as homogeneous epitaxy.

The epitaxial layer, as a key part of the device design, is decisive for the performance of the chip and the device, and accounts for 23% of the total cost.

Currently, the main methods for SiC thin film epitaxy include chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), and pulsed laser deposition and sublimation (PLD).

Each of these methods has its own characteristics, and the appropriate process method is selected based on the specific application requirements.

silicon carbide chips

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