Gan on Sic Wafer
Gan on Sic Wafer： sapphire substrates for thin films of gallium nitride
Gallium nitride thin films are frequently grown on sapphire substrates. Sapphire is reasonably priced, chemically stable, and absorbs little visible light. For low-current systems, its low thermal conductivity makes it a fantastic option.
Due of its qualities, it is a sought-after material for a variety of electrical devices, including flat-screen LED televisions and semiconductors. It can withstand a wide range of voltages and is a useful material for sensors. Sapphire substrates are available from a variety of suppliers and at a wide range of costs.
Electronic equipment requires GaN semiconductor devices as a critical component.Additionally, the semiconductors are utilized in scanners, scanners, and other medical devices. The technology will eventually take the place of silicon in a wide range of electronic gadgets.
Free Standing gan Wafer | Single Crystal Substrates
Si Doped Undoped Laser Device Gallium Nitride Wafer
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
8 Inch 12 Inch 6Inch gan Wafer
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
4inch 6 inch sic wafer
Gan on Sic Wafer
Gan on Sic Wafer ：
In the high-voltage market, vertical GaN power devices are anticipated to compete with pure silicon carbide power devices. SiC devices have increased their market share in the first two years in the high-voltage application market, and some businesses have increased the production of 6-inch and 8-inch SiC. Contrarily, vertical GaN devices are not yet commercially available, and only a handful of providers can produce GaN wafers with a 4-inch diameter. For the creation of vertical GaN devices, increasing the availability of high-quality GaN wafers is essential.
Gallium nitride-based high-voltage power devices have three possible applications. In particular, applications requiring high voltages, such as vertical GaN devices exceeding 600 V, have the potential to transform the power device sector. GaN devices, as opposed to conventional silicon-based power devices and newly developed pure silicon carbide power devices, exhibit lower on-resistance at a given breakdown voltage depending on the material’s physical characteristics. GaN-on-Silicon high mobility transistors (HEMTs), which are horizontal GaN power devices, compete with silicon devices in the low-voltage market and outperform them, demonstrating the superiority of GaN materials.
Benefits: 1. The theoretical on-resistance is an order of magnitude lower for a given breakdown voltage. As a result, less power is wasted due to forward bias, and energy efficiency is increased.
Second, the size of the produced device is smaller at the specified breakdown voltage and on-resistance. More devices may be produced from a single wafer when the device size is reduced, which lowers the cost. Additionally, the majority of applications call for smaller chips.
3. Gallium nitride provides a benefit in terms of the device’s maximum working frequency, which is dependent on the device’s design and the material properties. The greatest frequency that silicon carbide typically operates at is 1 MHz or less, whereas gallium nitride power devices can operate at higher frequencies, like tens of MHz. The size of passive components can be decreased by operating at higher frequencies, which also helps to reduce the size, weight, and price of the power conversion system.
The industry has not yet agreed on the ideal GaN vertical power device’s structure, and vertical GaN devices are still in the research and development stage. Current Aperture Vertical Electron Transistor (CAVET), Trench Field Effect Transistor (Trench FET), and Fin Field Effect Transistor are the three common device structures (Fin FET). A low N-doped layer serves as the drift layer in all device configurations. The breakdown voltage of the device is determined by the thickness of the drift layer, making this layer crucial. Achieving the theoretically lowest on-resistance also depends on the electron concentration. crucial function