Hemt Gan Wafer
Hemt Gan Wafer
Semiconductor devices that are generated in a thin layer include GaN epitaxial wafers. They are utilized in photovoltaics, photonics, and microelectronics. Materials like gallium nitride and gallium arsenide are used to create these wafers.
The resulting GaN epitaxial wafers have crystalline characteristics that are very consistent. These devices are grown using a technique that starts with a thin buffer layer growing at low temperatures and moves on to an epitaxial layer growing at high temperatures. Masks are frequently applied to the substrate or buffer layer in addition to this technique.A thin layer of GaN is deposited on an axonometrically orientated substrate to create a GaN epitaxial wafer.
The method is referred to as “step-wise progress.” The GaN polycrystal is deposited downstream after the base substrate is tethered upstream. The temperature at the lower end of the reactor, where the two substrates are placed, is higher than that of the top end. The polycrystal gasifies and deposits onto the base substrate once it has reached a higher temperature. The method is called sublimation, and a single-crystal film is what is produced.
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Hemt Gan Wafer
Hemt Gan Wafer ： We provide single-crystal AlN substrates on c-plane sapphire templates, also known as AlN wafers or AlN templates, for the growth of AlGaN epitaxially and in UV LEDs, semiconductors, and other electronic devices. Our C-plane AlN substrates are epi-ready and exhibit acceptable FWHM or dislocation density in XRD. The thickness ranges from 30 nm to 5 um. The creation of HEMT structures, resonant tunneling diodes, and acoustoelectronic devices all utilise the AlN template. Our single crystal Aluminum Nitride substrates with low dislocation have several uses, such as epitaxial growth of III-nitrides, lasers, RF transistors, and windows for infrared seekers. The ultraviolet, visible light, and infrared fall inside the prohibited band width (light emission and absorption).
Hemt Gan Wafer
Hemt Gan Wafer
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