FreeStanding Gan Wafer | Single Crystal Substrates
FreeStanding Gan Wafer : Free standing GaN crystal substrates of the highest quality with a homogeneous surface, no periodic flaws, and low dislocation density (on the order of 105/cm2). The useable area of these premium gallium nitride crystals is greater than 90%. N-type, P-type, semi-insulating, C-plane, M-plane, and A-plane are available options. up to a 2-inch diameter range.
We provide the best prices on the market for premium GaN crystal substrates since we sell directly from the manufacturer. We have earned the trust of clients from all around the world as their go-to source for GaN crystal substrates.
FreeStanding Gan Wafer | Single Crystal Substrates
FreeStanding Gan Wafer
AlGaN epitaxial growth and semiconductor devices The XRD FWHM or dislocation density of our epi-ready, C-plane AlN substrates is good. The thickness ranges from 30nm to 5um.
Our single crystal Aluminum Nitride substrates with low dislocation have a wide range of applications, including UV LEDs, detectors, IR seekers, epitaxial growth of III-nitrides, lasers, RF transistors, and other semiconductor devices.
The ultraviolet, visible light, and infrared are all covered by forbidden band width (light emission and absorption).
The AlN template is utilized in the creation of HEMT structures, resonant tunneling diodes, and acoustoelectronic devices.
AlN Aluminum Nitride Template 5um Thickness 430 um Sapphire 350 um Sic Substrates
GaN can be employed in a variety of applications, including LED displays, high-energy detection and imaging, laser projection displays, power devices, and so on.
Microwave Devices with a High Frequency High-energy detection and visualization
New hydrogen energy storage technology Environmental monitoring and biological medicine
Terahertz light source
Power Device, Laser Projection Display, and so on. Storage of dates
Lighting that saves energy Laser projections with full color fla display Electronic gadgets with high efficiency
FreeStanding Gan Wafer
| 2” AlN Templates–4 inch | |
| Item | AlN-T |
| Dimensions | Ф 2” |
| Substrate | Sapphire, SiC, GaN |
| Thickness | 4-5um |
| Orientation | C-axis(0001) ± 1° |
| Conduction Type | Semi-Insulating |
| Dislocation Density | XRD FWHM of (0002) < 200 arcsec. |
| XRD FWHM of (10-12) < 1000 arcsec | |
| Useable Surface Area | > 80% |
| Polishing | Standard: SSP |
| Option: DSP | |
| Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
FreeStanding Gan Wafer | Single Crystal Substrates
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