silicon carbide companies
We specialize in the production of 8-inch diameter (approximately 200 mm) silicon carbide (SiC) substrates, which are a key material in the manufacture of high-performance power and optoelectronic devices.
8-inch SiC substrates are particularly well suited for the fabrication of high-power electronic devices, including, but not limited to, power MOSFETs, power diodes, and other high-performance power semiconductor devices.
By utilizing this large substrate size, we are able to significantly improve productivity, reduce manufacturing costs, and help create more powerful and efficient devices.
silicon carbide companies
Silicon carbide materials are ideal for the manufacture of high-performance power devices, mainly due to their excellent thermal conductivity, high temperature resistance and radiation resistance.
These properties allow silicon carbide substrates to maintain stable performance under extreme operating conditions, ensuring efficient and reliable operation of power devices.
We have an experienced team of professionals and state-of-the-art manufacturing facilities to ensure that we always provide high-quality silicon carbide substrate products.
From direct-draw (CZ) and floating-zone (FZ) silicon wafers to SOI and glass wafers, we offer a comprehensive selection of products to meet the specific needs of different customers.
