sic chip
The technical characteristics of PVT method of growing SiC single crystal
PVT method to grow SiC single crystal to silicon carbide seed crystals as the center, through the physical evaporation and transport of new SiC single crystal materials deposited.
The method has the following technical features:
1. High-precision control: large-size, high-quality SiC single-crystal materials can be obtained by accurately controlling growth parameters such as temperature, pressure, and gas-phase composition.
2. High quality: SiC single crystals grown by the PVT method have excellent properties such as low defect density and high purity, which are suitable for manufacturing high-performance electronic devices.
3. Scalability: The technology of growing SiC single crystals by PVT method is highly scalable, and SiC single crystal materials of different sizes and specifications can be prepared to meet the needs of applications in different fields.
sic chip
It is worth mentioning that the 8-inch SiC seed crystals we provide are highly scarce in the market.
Due to the high technical difficulty in the preparation of large-size seed crystals. However, thanks to our close cooperation with Chinese silicon carbide factories and our rich experience in the industry, we are able to provide our customers with such high-quality 8-inch SiC seed crystals.
If you have a need for this, we are very willing to share more detailed information about our products with you and look forward to establishing a long-term and stable relationship with you.
