The following are the key steps in the process:
Process Steps
Surface Preparation
Prior to dicing, the wafer must be thoroughly cleaned to ensure that its surface is free of any contaminants.

Adhesive Film Attachment
In order to protect the wafer, a cut-resistant adhesive film is usually applied to its front or back side to prevent damage during the dicing process.

Dicing Preparation
According to the thickness of the wafer to choose the appropriate cutting method, common methods include blade cutting, laser cutting and plasma cutting.
Blade Cutting
For wafers over 100μm thick, diamond grinding wheels are used for cutting, and deionized water is sprayed to reduce friction and thermal damage.
Laser Dicing
Suitable for wafers with a thickness of less than 100μm, it reduces damage but is relatively inefficient.
Plasma Dicing
Suitable for very thin wafers (less than 30μm), this method is fast but the process is relatively complex.

Dicing process
During the cutting process, it is necessary to control the rotational speed of the impeller to maintain a uniform kerf, while continuously spraying deionized water for cooling.

Adhesive film treatment
After cutting is completed, the adhesive film on the back will automatically fall off in the subsequent processing, ready for chip separation.