2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer : Small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm, 5x5mm, and 10x5mm GaN wafer, Non-Polar Freestanding GaN Substrates, 2inch GaN Substrates Template, Semiconducting Gallium Nitride Wafer for LED, GaN Template, Mocvd GaN Wafer (a-plane and m-plane)
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
2 Inch Sapphire Wafer
sapphire optical windows, R-axis 2inch sapphire epi-ready substrate
Sapphire Wafer substrate 2 inch 3 inch 4 inch r-axis m-plane a-axis
2 Inch 4 Inch GaN Wafer : GaN Wafer Characteristic
| Product | Gallium nitride (GaN) substrates | ||||||||||||||
| Product Description: | Saphhire GaN template is presented Epitxial hydride vapor (HVPE) phase epitaxy technique. Gallium chloride reacts with ammonia to form acid, which is then used in the HVPE process to create gallium nitride melt. Gallium nitride single crystal substrate can be replaced economically with an epitaxial GaN template. | ||||||||||||||
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| Specifications: | GaN epitaxial film (C Plane), N-type, 2 “* 30 microns, sapphire; GaN epitaxial film (C Plane), N-type, 2 “* 5 microns sapphire; GaN epitaxial film (R Plane), N-type, 2 “* 5 microns sapphire; GaN epitaxial film (M Plane), N-type, 2 “* 5 microns sapphire. AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg) Note: according to customer demand special plug orientation and size. | ||||||||||||||
| Standard Packaging of 2 Inch 4 Inch GaN Wafer: | 1000 clean room, 100 clean bag or single box packaging |
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
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