Gan Silicon Wafer
Gallium Nitride Applications on a Sapphire Substrate
A direct bandgap semiconductor material is gallium nitride. It is a component of numerous electrical gadgets, including flat-screen LED televisions and 4G smartphones. It makes a great sensor material as well. It already has uses in many different electronic gadgets, and it is anticipated that it will have many more. This substance can withstand a variety of voltages and is quite inexpensive.
Electronics include gallium nitride, which is used to make blue LED lights.
The deformation characteristics of the material are influenced by how adherent it is to the substrate and tool. In general, the contact area between the tool and the GaN surface grows as the pressure beneath the tool drops. The shear stress that results is
Gan Silicon Wafer
Free Standing gan Wafer | Single Crystal Substrates
Si Doped Undoped Laser Device Gallium Nitride Wafer
300mm Gan Wafer | Gallium Nitride Wafer For Power Micro LED
8 Inch 12 Inch 6Inch gan Wafer
2 Inch 4 Inch GaN Wafer | Gallium Nitride Wafer
4inch 6inch GaN-ON-SiC EPI layer
Gan Silicon Wafer
Gan Silicon Wafer ：We are dedicated to the production of high-quality Blue LED epi-wafers on planar sapphire substrates and Pattern Sapphire Substrates (PSS) with wafer sizes ranging from 2 to 6 inches. As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um; we can also provide customized structures and parameters per customer specifications. The 2″ to 6″ diameter GaN on sapphire templates comprise of a thin layer of crystalline GaN generated via HVPE on a sapphire substrate. Now available are Epi-ready templates.
Gan Silicon Wafer
Gan Silicon Wafer
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